01523nas a2200157   4500008004100000245008300041210006900124520087000193100002001063700000501083700002201088700000501110700001401115700000501129856023101134       2007                        eng d00aUnited {States} {Patent}: 7196842 - {Attenuating} filter for ultraviolet light0 aUnited States Patent 7196842 Attenuating filter for ultraviolet 3 aAn attenuating filter provides a prescribed attenuation of the intensity of transmitted, short-wavelength, ultraviolet light, in particular, at wavelengths below 200 nm, that is governed by a predefinable spatial distribution of its spectral transmittance. The filter has a transparent substrate (3), e.g. fabricated from crystalline calcium fluoride. A filter coating (5) fabricated from a dielectric material that absorbs over a predefined wavelength range is applied to at least one surface (4) of the substrate. In the case of operating wavelengths of about 193 nm, the filter coating consists largely of tantalum pentoxide. Filters of the type, which may be inexpensively fabricated with high yields, are noted for their high abilities to withstand laser radiation and may be effectively antireflection coated employing simply designed antireflection coatings.1 aWeigl, Bernhard1 a1 aPaul, Hans-Jochen1 a1 aEva, Eric1 a  uhttp://patft.uspto.gov/netacgi/nph-Parser?Sect1=PTO2&Sect2=HITOFF&p=1&u=%2Fnetahtml%2FPTO%2Fsearch-bool.html&r=16&f=G&l=50&co1=AND&d=PTXT&s1=%22Weigl%3B+Bernhard%22.INNM.&OS=IN/%22Weigl;+Bernhard%22&RS=IN/%22Weigl;+Bernhard%2201275nas a2200121   4500008004100000245013000041210006900171260000800240520064900248100002000897700000500917856023100922       2001                        eng d00aUnited {States} {Patent}: 6294296 - {Method} and device for mutually aligning a mask pattern formed in a mask and a substrate0 aUnited States Patent 6294296 Method and device for mutually alig  csep3 aIn a method for mutually aligning a mask pattern formed in a mask 1 and a substrate 2, on which the mask pattern is to be imaged, by using setting marks 12a, 12b and 13a or 13b in the mask 1 and in the substrate 2, the alignment is performed with the aid of an imaging system and a light beam with polarized light 9. A phase shift for the first diffraction orders 20 is undertaken in the beam path 9a, 9b. Higher diffraction orders 21 and unwanted light are filtered out after the phase shift, and after the filtering out the light beams of the first diffraction orders 20 are detected, and the result is evaluated for the purpose of alignment.1 aWeigl, Bernhard1 a  uhttp://patft.uspto.gov/netacgi/nph-Parser?Sect1=PTO2&Sect2=HITOFF&p=1&u=%2Fnetahtml%2FPTO%2Fsearch-bool.html&r=28&f=G&l=50&co1=AND&d=PTXT&s1=%22Weigl%3B+Bernhard%22.INNM.&OS=IN/%22Weigl;+Bernhard%22&RS=IN/%22Weigl;+Bernhard%22